Applied Materials launched Centris™ Spectral™ SiN ALD and Producer™ Selectra™ Mo Etch systems to deliver uniform silicon nitride deposition and selective molybdenum removal in high-aspect-ratio 3D logic and 3D NAND structures. Leading chipmakers have validated the new tools for advanced node manufacturing to improve device performance, energy efficiency and yield.
Applied Materials introduced Centris™ Spectral™ SiN ALD and Producer™ Selectra™ Mo Etch systems to enable precise deposition and etch in demanding high-aspect-ratio 3D logic and memory structures. The tools target advanced nodes to support higher layer-count 3D NAND and GAA transistor architectures.
Centris™ Spectral™ SiN ALD uses microwave plasma technology to deposit uniform silicon nitride liners at low temperatures within vertical features. This innovation addresses film quality issues in DRAM, logic devices and GAA transistors, reducing resistance and capacitance at critical interfaces for faster device performance.
Producer™ Selectra™ Mo Etch delivers selective removal of molybdenum wordline metallization with top-to-bottom uniformity in tall 3D NAND stacks. Validated in high-volume manufacturing, the system improves wordline isolation, lowers leakage and enhances data retention compared to traditional wet etch processes.
