Atomera to present 4F² DRAM transistor paper at SISPAD 2026
ATOM•ATOM•ATOM•ATOM•A separate SISPAD 2026 poster on Sept. 29, 2026, will cover compact modeling of off-state leakage and breakdown in GaN-on-Si HEMTs.
The poster compares conventional silicon, high-resistivity silicon, and MST-modified silicon, showing lower low-voltage leakage and delayed high-field current rise with MST.
Atomera will present DRAM scaling work at SISPAD 2026 in Kumamoto, Japan, on Sept. 28, 2026.
The paper outlines TCAD results supporting 4F² DRAM junctionless vertical-channel transistors using MST-defined substrate doping to meet drive and retention targets.
