Atomera to present 4F² DRAM transistor paper at SISPAD 2026
ATOM•Related poster on GaN-on-Si HEMTs
A separate SISPAD 2026 poster on Sept. 29, 2026, will cover compact modeling of off-state leakage and breakdown in GaN-on-Si HEMTs.
The poster compares conventional silicon, high-resistivity silicon, and MST-modified silicon, showing lower low-voltage leakage and delayed high-field current rise with MST.
SISPAD 2026 presentation on DRAM scaling
Atomera will present DRAM scaling work at SISPAD 2026 in Kumamoto, Japan, on Sept. 28, 2026.
The paper outlines TCAD results supporting 4F² DRAM junctionless vertical-channel transistors using MST-defined substrate doping to meet drive and retention targets.
