Intel Foundry, ASML detail High-NA EUV reticle stitching at SPIE lithography conference - INTC News | RalliesIntel Foundry, ASML detail High-NA EUV reticle stitching at SPIE lithography conference
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INTC• Intel and ASML outline High-NA EUV stitching plans
- Intel attended the SPIE Photomask Technology + Extreme Ultraviolet Lithography conference to outline progress on High-NA EUV readiness.
- Intel Foundry, working with ASML, highlighted reticle stitching to use High-NA EUV with current 6-inch masks.
- The companies also detailed plans to shift toward 6x12-inch masks, targeting industry standards needed for future High-NA scaling.
- ASML’s Jan van Schoot presented on scanner and mask requirements for half-field stitching on Tuesday, September 8 at 11:00 a.m. Pacific.
- Intel Foundry’s Kimberly Pierce followed with a talk on stitching for manufacturing at 11:20 a.m. in the same session.
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