Mitsubishi Electric, employing approximately 150,000 staff across more than 200 group companies worldwide, has unveiled a new Talent Mobility System designed to identify, match and deploy high-potential employees across its global network. The system centralizes data on mid-career and young talent from overseas affiliates—roles traditionally confined to local offices—enabling rapid cross-border assignments. Concurrently, the company has revamped its Global On-the-Job Training (G-OJT) program to extend overseas placements from a few weeks to six-month rotations, providing deeper in-market experience. These initiatives aim to foster borderless career paths, accelerate skill sharing and drive innovation by leveraging diverse expertise throughout the group.

Beginning January 21, Mitsubishi Electric will ship samples of four newly developed trench silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) bare dies for power electronics applications such as EV traction inverters, onboard chargers and solar power inverters. Each die delivers up to a 20% reduction in on-resistance compared with previous generations, contributing to lower system power losses while maintaining high voltage tolerance. The company plans demonstrations at the 40th Nepcon Japan R&D and Manufacturing Show (January 21–23 in Tokyo) and subsequent exhibitions in North America, Europe, China and India. With the global power electronics market projected to grow at a CAGR of over 8% through 2028, Mitsubishi Electric expects these new dies to strengthen its position in the decarbonization supply chain.