Navitas Debuts SiC MOSFET Package with 6000V Isolation and 150% Power Boost
NVTS•Navitas launched UHV-TO-247-4-ISO SiC MOSFET package for 1200-3300V GeneSiC devices, featuring over 6000V integrated isolation and a thermal pad that cuts Rth by 60% and boosts power handling by up to 150%. It eliminates external isolation heat-sink interfaces, lowers EMI, targets energy, grid and AI data center power conversion.
1. Package Features
Navitas introduced the UHV-TO-247-4-ISO isolated through-hole package for its 1200V, 2300V and 3300V GeneSiC SiC MOSFET lineup. It integrates an aluminum nitride substrate providing over 6000V of isolation and meets 12 mm pin-to-pin creepage in a standard TO-247-4 footprint.
2. Thermal and EMI Improvements
The reflow-compatible thermal pad allows direct mounting to liquid- or air-cooled heat sinks, reducing junction-to-heatsink thermal resistance by up to 60% and boosting power handling by 150%. Integrated isolation cuts stray capacitance, lowering EMI and enabling higher switching speeds.
3. Target Markets and Benefits
Designed for energy, grid-tied converters, solid-state transformers, battery energy storage and AI data center power systems, the package removes external isolation and thermal interface materials. This simplifies system design, reduces component count and lowers total cost of ownership.
