Navitas Launches 1200V 5th-Gen SiC MOSFET with 35% FoM Gain
Navitas introduced its 5th-generation GeneSiC SiC Trench-Assisted Planar MOSFET platform, providing a 1200V line with a 35% improved RDS(ON)×QGD FoM and ~25% better QGD/QGS ratio for cooler, higher-frequency operation. The company targets AI data centers, grid infrastructure and industrial electrification, though AI-driven revenues may not materialize before 2027.
1. 5th-Gen GeneSiC Platform Launch
Navitas unveiled its 5th-generation GeneSiC trench-assisted planar SiC MOSFETs offering a 1200V line with a compact TAP architecture. The platform delivers a 35% improvement in RDS(ON)×QGD and ~25% better QGD/QGS ratio, cutting switching losses for cooler, higher-frequency power conversion.
2. Enhanced Reliability and Robustness
The new MOSFETs feature AEC-Plus grade qualification, threefold extended high-temperature, high-voltage stress testing and advanced dynamic reverse bias (DRB) and dynamic gate switching (DGS) tests. They ensure stable gate threshold (VGS,TH ≥3V), ultra-low failure-in-time rates, gate-oxide life exceeding one million years at 18V/175°C and integrated Soft Body-Diode technology to minimize EMI.
3. Strategic Pivot and Revenue Outlook
Navitas positions its GaN and SiC offerings to serve AI data centers, grid infrastructure and industrial electrification markets. Despite the technological leap, meaningful AI data center revenues are not expected until after 2027 as deployments scale.