Navitas Launches 1200V QDPAK with 35% FoM Gain and Low-Profile TO-247-4L
Navitas unveiled two 1200V GeneSiC™ 5th Gen SiC MOSFET packages—a top-side cooled QDPAK with 15×21 mm footprint, 2.3 mm height and 35% FoM gain, and a low-profile TO-247-4L with asymmetrical leads. These designs enhance thermal dissipation, extend creepage to 5 mm and boost power density in AI and grid systems.
1. 5th Generation GeneSiC Platform
Navitas’s GeneSiC™ 5th generation uses Trench-Assisted Planar technology to deliver a 35% improvement in the RDS(ON) × QGD figure of merit and about 25% better QGD/QGS ratio. Stable threshold voltage above 3 V ensures immunity to parasitic turn-on, yielding robust and predictable switching performance.
2. Top-Side Cooled QDPAK Package
The QDPAK supports 1200 V MOSFETs in 6.5 mΩ and 12 mΩ variants within a 15 × 21 mm footprint and 2.3 mm height. Its top-side thermal pad and 5 mm creepage enable direct heat transfer to heatsinks, reduced parasitic inductance for cleaner switching, and compatibility with high-volume automated assembly.
3. Low-Profile TO-247-4L Package
The TO-247-4L through-hole package offers 1200 V SiC MOSFETs with 6.5 mΩ or 12 mΩ RDS(ON) in a reduced vertical form factor. Asymmetrical leads improve PCB assembly tolerances, while the low height boosts power density in AI data center power supplies and compact infrastructure applications.