Navitas Semiconductor and EPFL Demonstrate 250kW 3.3kV-to-800V Solid-State Transformer
Navitas Semiconductor and EPFL unveiled a 250kW solid-state transformer at APEC 2026 using GeneSiC™ 3300V and 1200V SiC MOSFETs to convert 3.3kV AC to 800V DC for AI data centers. The single-stage modular bridge design eliminates bulky low-frequency transformers and boosts end-to-end efficiency and scalability.
1. Demonstration Overview
Navitas Semiconductor and EPFL’s Power Electronics Laboratory showcased a 250kW solid-state transformer (SST) at APEC 2026, highlighting a single-stage modular bridge rectifier that converts 3.3kV AC to 800V DC. The demonstrator features Navitas GeneSiC™ 3300V ultra-high voltage and 1200V high voltage SiC MOSFETs and modules.
2. Technology Details
The SST platform eliminates bulky low-frequency transformers, leveraging trench-assisted planar SiC MOSFET technology to enhance end-to-end efficiency and modularity. The design supports real-time control and galvanic isolation for scalable, flexible deployment in medium-voltage power conversion.
3. Implications for AI Data Centers
By enabling 800V DC distribution, the SST offers higher system density and opportunities for heat reuse in AI data centers. The demonstration reinforces Navitas’s position in next-generation power semiconductors and could accelerate adoption of 800V DC infrastructure.