Navitas Unveils 97.5% Efficient 800 V-to-6 V GaNFast PDB for AI Racks
NVTS•Navitas Semiconductor showcased its GaNFast-powered 800 V-to-6 V DC-DC board at NVIDIA’s MGX showcase, featuring 16 FETs at 650 V/11 mΩ, 97.5% peak efficiency at 1 MHz switching and 2100 W/in³ power density. Its 20% thinner ultra-low-profile design removes the 48 V intermediate bus converter stage, boosting efficiency and reducing AI server rack size.
1. Collaboration and Showcase Event
At the Taipei Nangang Exhibition Center on May 29th, Navitas participated in the NVIDIA Partner Ceremony and MGX ecosystem showcase during COMPUTEX, highlighting its 800 V-to-6 V DC-DC power delivery board alongside key AI infrastructure partners.
2. Power Delivery Board Specifications
The board integrates 16 GaNFast FETs rated at 650 V/11 mΩ in a DFN8×8 dual-cooled package, achieves up to 97.5% peak efficiency at 1 MHz switching frequency, delivers 2100 W/in³ power density, and measures approximately 20% thinner than a smartphone.
3. Implications for AI Infrastructure
By eliminating the traditional 48 V intermediate bus converter stage, the ultra-low-profile design enhances transient response, improves thermal performance, reduces rack footprint and supports the development of megawatt-scale AI server racks with higher power density.
