onsemi Launches GaNEXUS Sampling 40–650V FETs with Up to 2x Power Density
ON•onsemi launched GaNEXUS, a GaN power portfolio sampling FETs from 40 V to 650 V including 650 V smart FETs. The devices deliver 1.5–2x higher power density, reduce magnetics size 30–60% and improve efficiency by up to 2% for AI data centers, robotics and energy infrastructure.
1. Product Portfolio Launch
onsemi introduced its GaNEXUS™ portfolio with initial sampling of gallium nitride FETs spanning 40 V to 650 V, including 650 V GaNEXUS Smart devices featuring integrated protection. This launch expands onsemi’s intelligent power offerings alongside silicon and EliteSiC technologies.
2. Performance Advantages
GaNEXUS devices enable up to 2x higher power density, 30–60% smaller magnetics and efficiency gains of 0.5–2%, while reducing switching losses and improving thermal performance. Thermally enhanced packages support industry-standard footprints for dual sourcing and simplified system integration.
3. Market Applications
The portfolio targets high-growth sectors such as AI data center power delivery, 48 V intermediate bus converters, robotics, industrial automation and energy infrastructure. By addressing power density and thermal challenges, GaNEXUS aims to lower total system cost and accelerate deployment in demanding power architectures.
