Richardson Electronics Expands SiC Portfolio With NoMIS Power Partnership for 1.2–10 kV Solutions
RELL•Richardson Electronics has entered a global strategic partnership with NoMIS Power to integrate advanced silicon carbide solutions spanning 1.2 kV to 10 kV, emphasizing medium- and high-voltage platforms at 3.3 kV and above. The collaboration aims to accelerate SiC adoption across BESS, renewable energy, AI data centers, HVDC, and transportation markets.
1. Strategic Partnership Formation
On May 20, Richardson Electronics announced a global strategic partnership with NoMIS Power to integrate advanced silicon carbide devices. Under the agreement, Richardson will leverage NoMIS Power’s SiC MOSFET platforms and modules spanning 1.2 kV to 10 kV to enhance its Power & Microwave Technologies portfolio.
2. Expanded SiC Portfolio
The collaboration adds rugged, customizable SiC offerings with emphasis on medium-voltage and high-voltage solutions at 3.3 kV and above, targeting lower switching losses, higher thermal performance, and compact designs. This integration strengthens Richardson’s ability to support customers transitioning from legacy IGBT to SiC-based power conversion architectures.
3. Target Markets and Growth Outlook
Richardson aims to accelerate SiC adoption across battery energy storage systems, renewable energy conversion, AI data center infrastructure, HVDC interfaces, transportation, aerospace, and defense power systems. The partnership is poised to drive long-term revenue growth by addressing demand in mission-critical electrification and high-efficiency power markets.
