Samsung Electronics launches next-generation AI memory technology
SMH•Samsung unveils BV-NAND prototype at FMS
Aug. 4 (Reuters) - Samsung Electronics introduced a new generation of artificial intelligence memory technology on Tuesday, seeking to reinforce its chipmaking lead in the booming AI market.
The world's largest memory chip manufacturer chose this year's Future of Memory and Storage (FMS) conference in Santa Clara, California, to introduce its V10 Bonding V-NAND, or BV-NAND, prototype. The chip features more than 400 layers and a new wafer-bonding architecture to increase storage density and boost performance.
AI demand drives higher-capacity NAND needs
As AI workloads have expanded beyond training large language models to the process of generating answers to user queries, demand for high-capacity NAND memory has increased. NAND flash memory is used to store data such as photos, videos and applications in devices including smartphones.
The company said its BV-NAND technology increases memory density by about 58% from its previous V9 NAND while improving read, write and input/output performance to meet growing demand from AI systems requiring higher-capacity and more power-efficient storage.
