Tower Semiconductor, Coherent Achieve 400 Gbps/Lane Silicon Modulator for 3.2 T Transceivers
Tower Semiconductor and Coherent demonstrated 400 Gbps per lane data transmission using a silicon Mach-Zehnder modulator built in a production-ready silicon photonics process, achieving a clear open eye at 420 Gb/s PAM4 with Coherent’s InP CW laser. This milestone targets next-generation 3.2 T optical transceivers for high-speed datacenter AI connections.
1. Breakthrough Demonstration
Tower Semiconductor and Coherent showcased a 400 Gbps per lane silicon Mach-Zehnder modulator built on Tower’s production-ready SiPho platform, achieving a clear open eye at 420 Gb/s PAM4 using Coherent’s InP CW high-power laser. This demonstration paves the way for next-generation optical interconnects.
2. Targeting 3.2 T Optical Transceivers
The technology is aimed at enabling 3.2 T aggregate optical transceivers for pluggable modules and co-packaged optics in datacenter AI infrastructure. Rising demand for higher-bandwidth optical modules is driving market growth beyond prior projections.
3. Strategic Partnership
The collaboration leverages Coherent’s photonics design expertise and Tower’s multi-fab SiPho capabilities. Joint development accelerates silicon photonics adoption and extends the value of existing wafer capacity investments.
4. Manufacturing Capacity and Outlook
Tower Semiconductor will utilize its global 200 mm and 300 mm facilities in Israel, the US, Japan, and Italy to scale production. The milestone supports Tower’s strategy of reusing large-scale capacity while advancing towards more advanced material systems.