Tower Semiconductor inked a multi-year deal with IQE for Indium Phosphide epiwafers, including minimum purchase commitments in year one and reciprocal supply volumes thereafter for 200Gb/s and 400Gb/s silicon photonics applications in AI data centers. The agreement settles all prior IP disputes with a royalty-free porous silicon patent license.
Tower Semiconductor and IQE signed a multi-year supply agreement for Indium Phosphide epiwafers, featuring minimum purchase commitments by Tower in the first year and reciprocal volume commitments from IQE in subsequent years to support Tower’s production roadmap.
IQE’s InP epiwafers will integrate into Tower’s advanced silicon photonics platforms, enabling 200Gb/s per lane pluggable transceivers, prototyping of next-generation 400Gb/s modulators, and optical-circuit-switch deployments for AI-driven data center infrastructure.
Under a separate accord, Tower granted IQE a worldwide, royalty-free license to porous silicon patents, fully resolving prior litigation and granting mutual rights to use key IP in future photonic device manufacturing.
