Wolfspeed introduced its new TO-Leaded, Top-Side Cooled (TOLT) portfolio built on its Gen 4 MOSFET technology, designed to meet the escalating power and cooling requirements of AI and hyperscale datacenters. The TOLT package enables heat dissipation from the top side of the module, delivering up to 30% higher power density compared with traditional bottom-cooled designs. This launch follows the U2 portfolio release and represents the second of three top-side cooled offerings planned by Wolfspeed in 2026, underscoring the company’s commitment to advancing power semiconductor architectures for next-generation rack-scale deployments.

By leveraging Gen 4 silicon carbide wafers manufactured in the U.S., the TOLT portfolio supports continuous operation at junction temperatures up to 175 °C and offers on-resistance options as low as 7 mΩ at 650 V. These specifications enable original equipment manufacturers to shrink power supply footprints by 25%, reduce cooling subsystem costs, and achieve overall system efficiency gains of up to 2 percentage points. Guy Moxey, Wolfspeed’s VP of Industrial & Energy, highlighted that compact, thermally optimized power modules are critical as AI workloads push datacenter power densities above 50 kW per rack.

Wolfspeed’s domestically based silicon carbide substrate production provides supply chain resilience amid global component shortages, ensuring consistent wafer availability to support rapid datacenter buildouts. The 650 V TOLT devices are immediately available in multiple RDS(on) variants, with customer shipments already underway to leading hyperscale server integrators. Wolfspeed expects the top-side cooled portfolio to contribute over 15% of its power device revenue by year-end, reinforcing its leadership in silicon carbide technology as data center operators target sub-3x PUE (power usage effectiveness) metrics.