XMax to acquire GaN power semiconductor developer Hexa Creation
XMAX•XMax agreed to acquire 100% of Hexa Creation, which develops 1200V vertical GaN trench MOSFET technology for AI data center power infrastructure and other high-voltage uses.
1. Acquisition details
XMax agreed to buy all of the U.S. company Hexa Creation’s outstanding shares. Hexa Creation develops 1200V vertical GaN trench MOSFET technology and holds an exclusive license to patents and related intellectual property from a U.S. public university.
2. Power infrastructure strategy
XMax said the deal extends its AI strategy into power infrastructure as data centers move toward higher-voltage architectures such as 800VDC.
