Applied Materials Launches PECVD and ALD Systems for 2nm Gate-All-Around Chips
Applied Materials introduced two atomic-scale deposition platforms—Precision Selective Nitride PECVD and Trillium ALD—targeting Gate-All-Around logic nodes at 2 nm and below. These systems boost performance-per-watt by preserving shallow trench isolation and delivering angstrom-level metal gate uniformity for AI-optimized chips packing over 300 billion transistors.
1. Atomic-Scale Deposition Systems Unveiled
Applied Materials introduced two chipmaking platforms—Precision Selective Nitride PECVD and Trillium ALD—to enable atomic-level materials control for Gate-All-Around transistors at 2 nm and beyond. Both systems address critical deposition challenges to preserve shallow trench isolation and ensure uniform metal gate stacks, supporting advanced AI workloads.
2. Precision Selective Nitride PECVD Details
Precision Selective Nitride PECVD uses a selective bottom-up deposition at low temperatures to reinforce shallow trench isolation trenches with silicon nitride. By preserving trench integrity, the system reduces parasitic capacitance and leakage, maintaining consistent transistor behavior through over 500 process steps.
3. Trillium ALD System Features
Trillium ALD delivers angstrom-level metal deposition for GAA gate stacks, surrounding 10 nm-spaced silicon nanosheets with uniform metal layers. Integrated on the proven Endura platform, it offers tunable threshold voltages for performance and power efficiency across diverse AI computing designs.
4. Adoption and Market Implications
Leading foundry-logic manufacturers have begun adopting these systems for 2 nm and below nodes, positioning Applied Materials to capture demand driven by surging AI compute infrastructure. These technologies strengthen the company’s materials engineering leadership and may drive future equipment revenue growth as GAA scaling intensifies.