Micron Samples 256GB DDR5 RDIMM at 9,200 MT/s, Cuts Power by 40%
Micron has begun sampling a 256GB DDR5 registered DIMM built on its 1-gamma DRAM, delivering speeds up to 9,200 MT/s—over 40% faster than current modules. A single 256GB module cuts operating power by more than 40% versus two 128GB modules, targeting AI and HPC server efficiency.
1. Sampling Breakthrough
Micron has initiated sampling of its 256GB DDR5 RDIMM to key server ecosystem enablers, showcasing its 1-gamma DRAM with speeds up to 9,200 MT/s—more than 40% faster than current volume products. This rapid validation effort aims to ensure broad platform compatibility and accelerate deployment in next-generation AI and HPC infrastructures.
2. Advanced Packaging and Efficiency
The module leverages 3D stacking (3DS) and through-silicon vias (TSVs) to stack multiple memory dies, enabling high capacity and bandwidth in a single DIMM. Compared with two 128GB modules, a lone 256GB unit reduces operating power by over 40%, addressing thermal and energy constraints in modern data centers.