On January 21, Mitsubishi Electric Corporation commenced sample shipments of four trench silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) bare dies, targeting power electronics applications such as electric vehicle (EV) traction inverters, onboard chargers and renewable-energy power supply systems. These chips, provided without protective housing to facilitate direct integration, are engineered to deliver up to 30% lower conduction losses compared with conventional silicon IGBT modules, boosting energy efficiency in high-voltage inverters operating above 1,200 volts.

The introduction of these new bare dies supports Mitsubishi Electric’s strategy to capture a growing slice of the global power semiconductor market, which is forecast to expand in line with decarbonization policies and EV adoption. By offering devices that reduce overall system power consumption by an estimated 10–15%, the company aims to drive higher content per vehicle and power installation. Analysts project that margins on high-performance SiC products can exceed those of traditional silicon offerings by up to 5 percentage points, potentially bolstering Mitsubishi Electric’s semiconductor segment EBITDA starting in the 2026 fiscal year.

Mitsubishi Electric will showcase the trench SiC-MOSFET bare dies at the 40th Nepcon Japan R&D & Manufacturing Show in Tokyo from January 21–23. Following the Tokyo debut, the company plans live demonstrations and technical briefings at trade fairs in North America, Europe, China and India during the first half of 2026. These roadshows aim to secure design-wins with Tier 1 automotive suppliers and renewable-energy OEMs, setting the stage for mass production planned for late 2026 and initial commercial shipments in early 2027.