Samsung Ships 12-Layer HBM4E Samples Delivering 20% Speed Boost to AMD
AMD•Samsung Electronics has begun shipping samples of its 12-layer HBM4E memory chip, delivering over 20% higher speed versus prior HBM4 products and built on sixth-generation 10nm DRAM with a 4nm logic base die. AMD is listed among initial AI server customers receiving these samples, positioning it for higher-bandwidth memory in next-generation GPUs.
1. Shipment Details
Samsung Electronics began shipping samples of its 12-layer HBM4E high-bandwidth memory chip, marking the industry’s first deployment of such products. The chip offers more than a 20% speed increase over its previous HBM4 generation and leverages Samsung’s 1c DRAM process technology alongside a 4nm foundry logic base die.
2. AMD Integration
AMD is among the initial recipients of HBM4E samples, enabling the company to test and integrate the higher-performance memory into its upcoming AI-focused GPUs and accelerators. Access to the faster memory could help AMD improve data throughput in its MI300 series and future AI server offerings.
3. Market Implications
This sample rollout arrives just three months after Samsung began shipping HBM4 chips, underscoring aggressive product cadence in the AI memory market. Early access to HBM4E may give AMD a competitive edge in bandwidth-intensive workloads, while Samsung strengthens its position as a key memory supplier.
