Vishay Launches 40V MOSFETs with 0.9 mΩ On-Resistance and <1 Qgd/Qgs Ratio
VSH•Vishay introduced four 40 V MOSFETs with Vth(min) above 2.5 V and Qgd/Qgs ratios under 1 to prevent false triggering and reduce gate noise in motor control circuits. The SIR5402DP–SIR5408DP series delivers RDS(on) from 0.9 mΩ to 2.5 mΩ and gate charge from 32.6 nC to 82 nC, with a 13-week lead time.
1. New MOSFET Series Launched
Vishay Intertechnology has unveiled four standard-level 40 V n-channel MOSFETs—SIR5402DP, SIR5404DP, SIR5406DP, and SIR5408DP—in a compact PowerPAK SO-8 package aimed at high-noise motor control circuits.
2. Key Technical Enhancements
Each device features a minimum gate threshold voltage exceeding 2.5 V and Qgd/Qgs ratios below 1, preventing false triggering and reducing gate-induced voltage fluctuations for synchronous rectification and DC/DC conversion in BLDC motors, power tools, drones, and automation systems.
3. Availability and Applications
The MOSFETs deliver on-resistance values from 0.9 mΩ to 2.5 mΩ at 10 V and gate charges between 32.6 nC and 82 nC; samples and production quantities are available now with a 13-week lead time.
