GlobalFoundries deploys SLATE on 9SW, cuts die size by 45%
GFS•GlobalFoundries has qualified its SLATE wafer-to-wafer bonding technology on the 9SW RF-SOI platform for production-ready 3D integration in 5G front-end modules. The SLATE process folds large FETs across bonded wafers, cutting die size by 45% and ramping to volume production by H2 2027 at GF’s 300mm Singapore facility.
1. Production Readiness and Timeline
GlobalFoundries has achieved production readiness for SLATE technology on its 9SW RF-SOI platform, with manufacturing established at its 300mm Singapore facility. Volume production is targeted for the second half of 2027, aligning with projected demand for next-generation 5G front-end modules.
2. SLATE Wafer-to-Wafer Bonding and Performance Benefits
SLATE enables wafer-to-wafer bonding of two 9SW wafers to stack large-area field-effect transistors in a vertical layout. This 3D integration delivers up to 45% die size reduction, lower RF board space requirements and enhanced efficiency through reduced on-resistance and off-capacitance.
3. Market Applications and Future Roadmap
The combined 9SW SLATE solution supports compact switches, low-noise amplifiers and antenna tuners for smart mobile and satellite communications devices. An integrated process design kit and GlobalShuttle multi-project wafers facilitate prototyping, while SLATE’s roadmap extends to FD-SOI and SiGe technologies for diverse markets.
