MU•MU•Micron boosts U.S. fab and technology investments to $250B through 2035, marking its first concrete pour at the Clay, New York site a quarter ahead of schedule. It also pledges up to $3B for domestic supply-chain support, including $500M for GlobalWafers’ 300mm wafer facility and a 10-year wafer supply pact.
Micron raised its U.S. investment plan to more than $250B through 2035 to support surging memory demand driven by AI and secure production of 40% of its DRAM domestically. This expansion underpins the company’s long-term strategy to reinforce technology leadership and drive economic growth through high-paying direct and indirect jobs.
At the Clay, New York site, Micron marked its first concrete pour a quarter ahead of schedule, transitioning from site preparation to vertical construction for what will become the largest semiconductor manufacturing campus in U.S. history. The project is expected to generate up to 50,000 jobs in New York State, including 9,000 direct Micron positions.
Micron pledged up to $3B to strengthen the domestic semiconductor ecosystem, allocating $500M in strategic financing to GlobalWafers’ 300mm wafer facility in Sherman, Texas, alongside a 10-year wafer supply agreement. This investment aims to secure critical raw materials, enhance supply assurance and bolster resilience for future technology innovation.
Beyond New York, Micron is advancing fabs in Idaho with first wafer output targeted mid-2027 and a second fab by late 2028, while Virginia has commenced production of 1α DDR4 memory. Together, these U.S. projects are projected to create over 90,000 jobs and enhance national security by localizing advanced memory manufacturing.
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