Mitsubishi Electric to Ship Four Trench SiC-MOSFET Dies for EV, Renewable Power Gear

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Mitsubishi Electric will ship samples of four trench SiC-MOSFET bare dies from January 21 for EV traction inverters, onboard chargers and renewable-energy systems to reduce power consumption while preserving performance. The dies will debut at Nepcon Japan and exhibitions as the company taps expanding decarbonization-driven demand for high-efficiency power semiconductors.

1. Talent Mobility System to Bolster Global Workforce Deployment

Mitsubishi Electric is rolling out a new Talent Mobility System designed to map and match its top performers across more than 200 group companies in over 100 countries. With a global headcount of roughly 150,000, the company will track high‐potential mid‐level and young employees, especially those in overseas affiliates, to enable cross–regional career moves. By centralizing talent data and creating borderless job‐matching opportunities, Mitsubishi Electric aims to accelerate leadership development, boost engagement and drive its transformation into an “innovative company” capable of generating new value without fear of risk.

2. SiC-MOSFET Bare Dies to Advance Power‐Semiconductor Offerings

Starting January 21, Mitsubishi Electric will ship samples of four new trench silicon carbide (SiC) MOSFET bare dies for use in EV traction inverters, onboard chargers and renewable‐energy power systems. These chips, which lack traditional packaging, promise lower power losses while sustaining high performance. The company will showcase them at Nepcon Japan (January 21–23) and at upcoming trade shows in North America, Europe, China and India. As global decarbonization efforts drive demand for energy‐efficient power electronics, these bare dies position Mitsubishi Electric to capture share in a market projected to expand at a double‐digit annual rate over the next five years.

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