Navitas Unveils 97.5% Efficient 20kW GaN AI Power Board and 98.5% DC-DC Platform
Navitas will unveil at PCIM 2026 a 20kW 800V-to-6V GaN power board with 97.5% peak efficiency and a 10kW 800V-to-50V DC-DC full-brick platform delivering 98.5% efficiency, removing 48V IBC stage in AI data centers. It showcases SiC-based SST converters up to 50kVA and 3300V, strengthening its GaNFast and GeneSiC offerings.
1. AI Data Center Power Solutions
Navitas will showcase two GaN-based AI data center modules: a 20kW 800V-to-6V power delivery board achieving 97.5% peak efficiency and a 10kW 800V-to-50V DC-DC full-brick platform hitting 98.5% efficiency. Both eliminate the 48V intermediate bus converter stage, boosting power density and reducing system cost.
2. SiC-Based Grid Converters
The company will present SiC-enabled solid-state transformer (SST) topologies for energy and grid infrastructure, including a full SST cell integrating primary and secondary stages with 3300V and 1200V SiCPAK modules, plus a 50kVA bi-directional active front end using 3300V SiC MOSFETs. These solutions target high-voltage MV-to-HV DC conversion and bi-directional energy flow.
3. Wide Bandgap Product Line Expansion
Navitas will also highlight its GaNFast FETs ranging from 0.8 mΩ at 100V to 11 mΩ at 650V and its GeneSiC trench-assisted planar SiC MOSFETs in QDPAK and TO247-LP. The expanded GaNSafe, GaNSlim and bi-directional GaN IC families underline its integrated power IC strategy for electrification and performance computing markets.