Samsung Ships 20% Faster HBM4E Samples, Heightening Pressure on Micron
MU•Samsung Electronics has started shipping samples of its 12-layer HBM4E chip, which delivers over 20% faster performance using 1c DRAM process technology and a 4-nanometer logic base die, intensifying competition in the AI memory sector. Shares rose 6.5% while Micron risks further market share losses to early movers.
1. Samsung Launches HBM4E Samples
Samsung has begun shipping samples of its 12-layer HBM4E high-bandwidth memory chip, touting more than 20% speed improvement over previous HBM4 products by integrating its sixth-generation 10-nm-class DRAM process with a 4-nm logic base die.
2. Competitive Implications for Micron
By moving first with advanced HBM4E samples, Samsung seeks to regain momentum against rivals like Micron, potentially capturing the majority of early AI data center memory orders and squeezing competitors’ pricing power.
3. Market Reaction and Share Impact
Samsung’s shares jumped up to 6.5% on the announcement, reflecting investor optimism, while Micron faces mounting pressure to accelerate its HBM product roadmap to defend and recover lost market share.
